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STGP12NB60H Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
®
STGP12NB60H
N-CHANNEL 12A - 600V TO-220
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGP12NB60H
600 V < 2.8 V 12 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
s UPS
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Emitter-Collector Voltage
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM(•)
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
V a lu e
600
20
± 20
24
12
96
100
0 .8
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
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