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| STGP10NB60SDFP Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT | |||
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STGP10NB60SDFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh⢠IGBT
TYPE
VCES
VCE(sat)
IC
STGP10NB60SDFP
600
< 1.8 V 10 A
s HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
3
2
1
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH⢠IGBTs, with outstanding
performances. The suffix âSâ identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s LIGHT DIMMER
s STATIC RELAYS
s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM ( ) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
November 2002
Value
Unit
600
V
20
V
± 20
V
20
A
10
A
80
A
30
W
0.2
W/°C
2500
V
â65 to 150
°C
175
°C
(q ) Pulse width limited by safe operating area
1/8
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