STGFW40H65FB Datasheet, PDF (1/21 Pages) STMicroelectronics – Tight parameter distribution

STGFW40H65FB, STGW40H65FB,
STGWA40H65FB, STGWT40H65FB
Trench gate field-stop IGBT, HB series
650 V, 40 A high speed
Datasheet - production data
TO-3PF
3
2
1
3
2
1
TO-247
TAB
3
2
1
TO-247 long leads
3
2
1
TO-3P
Figure 1: Internal schematic diagram
C(2, TAB)
G(1)
E(3)
Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 Very low saturation voltage: VCE(sat) = 1.6 V
(typ) @ IC = 40 A
 Safe paralleling
 Tight parameter distribution
 Low thermal resistance
Applications
 Photovoltaic inverters
 High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGFW40H65FB
STGW40H65FB
STGWA40H65FB
STGWT40H65FB
G1C2TE3
Table 1: Device summary
Marking
Package
GFW40H65FB
TO-3PF
GW40H65FB
GWA40H65FB
TO-247
TO-247 long leads
GWT40H65FB
TO-3P
Packing
Tube
Tube
Tube
Tube
March 2017
DocID025171 Rev 7
This is information on a product in full production.
1/21
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