STGFW30V60DF Datasheet, PDF (1/15 Pages) STMicroelectronics – Low thermal resistance

STGFW30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
1
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
C (2)
Features
• Maximum junction temperature: T_J = 175 °C
• Tail-less switching off
• V_CE(sat) = 1.85 V (typ.) @ I_C = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1)
E (3)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGFW30V60DF
Table 1. Device summary
Marking
Package
GFW30V60DF
TO-3PF
Packaging
Tube
March 2014
This is information on a product in full production.
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