STGFW30H65FB Datasheet, PDF (1/20 Pages) STMicroelectronics – Low thermal resistance

STGFW30H65FB, STGW30H65FB,
STGWT30H65FB
Trench gate field-stop IGBT, HB series
650 V, 30 A high speed
Datasheet - production data
1
3
2
1
TO-3PF TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGFW30H65FB
STGW30H65FB
STGWT30H65FB
Table 1. Device summary
Marking
Package
GFW30H65FB
TO-3PF
GW30H65FB
TO-247
GWT30H65FB
TO-3P
Packing
Tube
Tube
Tube
July 2015
This is information on a product in full production.
DocID025849 Rev 5
1/20
www.st.com
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