STGFW20V60F Datasheet, PDF (1/19 Pages) STMicroelectronics – Low thermal resistance

STGFW20V60F,
STGW20V60F, STGWT20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
1
3
2
1
TO-3PF
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Features
• Maximum junction temperature: T_J = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V_CE(sat) = 1.8 V (typ.)
@ I_C = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
E (3)
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGFW20V60F
STGW20V60F
STGWT20V60F
Table 1. Device summary
Marking
Package
GFW20V60F
GW20V60F
GWT20V60F
TO-3PF
TO-247
TO-3P
Packaging
Tube
Tube
Tube
July 2013
This is information on a product in full production.
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1/19
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