STGFW20V60DF Datasheet, PDF (1/15 Pages) STMicroelectronics – Low thermal resistance

STGFW20V60DF
Trench gate field-stop IGBT, V series
600 V, 20 A very high speed
Datasheet - production data
TO-3PF
3
2
1
Figure 1: Internal schematic diagram
C (2)
Features
 Maximum junction temperature: TJ = 175 °C
 Very high speed switching series
 Tail-less switching off
 VCE(sat) = 1.8 V (typ.) @ IC = 20 A
 Tight parameters distribution
 Safe paralleling
 Low thermal resistance
 Very fast soft recovery antiparallel diode
 Lead free package
Applications
 Photovoltaic inverters
 Uninterruptible power supply
 Welding
 Power factor correction
 Very high frequency converters
G (1)
Sc12850_no_tab
E (3)
Order code
STGFW20V60DF
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the V series
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, the positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Table 1: Device summary
Marking
Package
Packing
G20V60DF
TO-3PF
Tube
February 2017
DocID026148 Rev 2
This is information on a product in full production.
1/15
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