STGFW20H65FB Datasheet, PDF (1/20 Pages) STMicroelectronics – Low thermal resistance

STGFW20H65FB, STGW20H65FB,
STGWT20H65FB
Trench gate field-stop IGBT, HB series
650 V, 20 A high speed
Datasheet - production data
TAB
3
2
1
TO-3P
1
3
2
1
TO-247
3
2
1
TO-3PF
Figure 1. Internal schematic diagram
C (2, TAB)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.55 V (typ.) @ I_C = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field-stop
G (1)
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
E (3)
tight parameter distribution result in safer
paralleling operation.
Order codes
STGFW20H65FB
STGW20H65FB
STGWT20H65FB
Table 1. Device summary
Marking
Package
GFW20H65FB
TO-3PF
GW20H65FB
GWT20H65FB
TO-247
TO-3P
Packaging
Tube
Tube
Tube
August 2014
This is information on a product in full production.
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