|
STGF15M65DF2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Trench gate field-stop IGBT M series, 650 V 15 A low loss | |||
|
STGF15M65DF2
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datasheet - preliminary data
TO-220FP
Figure 1: Internal schematic diagram
Features
ï· 6 µs of short-circuit withstand time
ï· VCE(sat) = 1.55 V (typ.) @ IC = 15 A
ï· Tight parameter distribution
ï· Safer paralleling
ï· Low thermal resistance
ï· Soft and very fast recovery antiparallel diode
Applications
ï· Motor control
ï· UPS
ï· PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGF15M65DF2
Table 1: Device summary
Marking
G15M65DF2
Package
TO-220FP
Packing
Tube
October 2015
DocID028488 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/15
www.st.com
|
▷ |