STGF10NB60SD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT

STGF10NB60SD
N-CHANNEL 10A - 600V TO-220FP
PowerMESH™ IGBT
TYPE
V_CES
V_{CE(sat) (Max)}
I_C
@25°C
@100°C
STGF10NB60SD 600
< 1.8 V
10 A
s HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
3
2
1
TO-220FP
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH^™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
s LIGHT DIMMER
s STATIC RELAYS
s MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Reverse Battery Protection
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuous) at T_C = 25°C
I_C
Collector Current (continuous) at T_C = 100°C
I_CM (q) Collector Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
June 2003
Value
600
20
± 20
20
10
80
25
0.2
2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C
(q ) Pulse width limited by safe operating area
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