STGF100N30 Datasheet, PDF (1/13 Pages) STMicroelectronics – Optimized for sustain and energy recovery circuits in PDP applications

STGF100N30
STGP100N30, STGW100N30
90 A - 330 V - fast IGBT
Features
■ Optimized for sustain and energy recovery
circuits in PDP applications.
■ State-of-the-art STripFET™ technology
■ Peak collector current I_RP = 330 A @
T_C = 25 °C (see Table 2)
3
2
1
TO-220FP
3
2
1
TO-247
■ Very low-on voltage drop (V_CE(sat)) and energy
per pulse for improved panel efficiency
) _{■ High repetitive peak current capability}
ct(s _Description
du _{Advanced high-density and high-current IGBT}
ro technology with low-drop companion diode
P adapted to various functions in PDP sets.
3
2
1
TO-220
Figure 1. Internal schematic diagram
lete ^{Product(s) - Obsolete} _{Table 1. Device summary}
so_{Order codes}
Ob STGF100N30
Marking
GF100N30
Package
TO-220FP
Packaging
Tube
STGP100N30
GP100N30
TO-220
Tube
STGW100N30
GW100N30
TO-247
Tube
February 2009
Rev 1
1/13
www.st.com
13