STGE50NB60HD Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT

®
STGE50NB60HD
N-CHANNEL 50A - 600V ISOTOP
PowerMESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGE50NB60HD 600 V < 2.8 V 50 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
PRELIMINARY DATA
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_GE G ate-Emitter Voltage
I_C
Collector Current (continuous) at T_c = 25 ^oC
I_C
Collector Current (continuous) at T_c = 100 ^oC
ICM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
T_{s tg} Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
V a lu e
600
± 20
100
50
400
300
2 .4
-65 to 150
150
Unit
V
V
A
A
A
W
W /^o C
o_C
o_C
June 1999
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