STGD7NB60H Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT

STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STD7NB60H
600 V < 2.8 V
7A
s HIGH INPUT IMPEDANCE
s LOW ON-VOLTAGE DROP (V_cesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s CO-PACKAGED WITH TURBOSWITCHT
s TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
s ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Emitter-Collector Voltage
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuos) at T_C = 25°C
I_C
Collector Current (continuos) at T_C = 100°C
I_CM (s) Collector Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
July 2000
Value
600
20
± 20
14
7
56
55
0.44
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
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