STGD7NB120S-1_0008 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT

STGD7NB120S-1
N-CHANNEL 7A - 1200V - IPAK
PowerMESH™ IGBT
PRELIMINARY DATA
TYPE
V_CES
V_CE(sat)
I_C
STGD7NB120S-1 1200 V < 2.1 V
7A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (V_cesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s HIGH CURRENT CAPABILITY
3
2
1
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH^™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
IPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s MOTOR CONTROL
s LIGHT DIMMER
s INTRUSH CURRENT LIMITATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Reverse Battery Protection
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuos) at T_C = 25°C
I_C
Collector Current (continuos) at T_C = 100°C
I_CM (s) Collector Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
Value
1200
20
±20
10
7
20
55
0.4
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
(q) Pulse width limited by safe operating area
Aug 2000
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.