STGD7NB120S-1 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 7A - 1200V IPAK Power MESH IGBT

®
STGD7NB120S-1
N-CHANNEL 7A - 1200V IPAK
Power MESH™ IGBT
T YPE
V _CES
V_CE(sat)
I_C
STGD7NB120S-1 1200 V < 2.1 V
7A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (Vcesat)
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
PRELIMINARY DATA
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
3
2
1
IPAK
TO-251
(Suffix ”-1”)
APPLICATIONS
s LIGHT DIMMER
s INRUSH CURRENT LIMITATION
s MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_ECR
V_GE
I_C
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at T_c = 25 ^oC
Collector Current (continuous) at Tc = 100 ^oC
I_CM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 2000
Value
1200
20
± 20
10
7
20
55
0 .4
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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