STGD6NC60H-1 Datasheet, PDF (1/13 Pages) STMicroelectronics – High frequency operation

TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
C (2 or TAB)
G (1)
E (3)
STGD6NC60H-1
N-channel 600 V, 7 A - IPAK
Very fast PowerMESH™ IGBT
Datasheet - production data
Features
Type
STGD6NC60H
V_CES
600V
V_CE(sat)
max@25°C
<2.5V
I_C
@100°C
7A
• Low on voltage drop (V_cesat)
• Low C_RES / C_IES ratio (no cross-conduction
susceptibility)
• High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix H identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced t_fall) maintaining a low voltage drop.
Applications
• High frequency inverters
• SMPS and PFC in both hard switch and
resonant topologies
• Motor drivers
Part number
STGD6NC60H-1
Table 1. Device summary
Marking
Package
GD6NC60H
IPAK
Packaging
Tube
April 2014
This is information on a product in full production.
DocID025306 Rev 1
1/13
www.st.com