STGD6M65DF2 Datasheet, PDF (1/20 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 6 A low loss

STGD6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 6 µs of short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 6 A
 Tight parameter distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGD6M65DF2
Table 1: Device summary
Marking
Package
G6M65DF2
DPAK
Packing
Tape and reel
August 2016
DocID028703 Rev 3
This is information on a product in full production.
1/20
www.st.com