STGD4M65DF2 Datasheet, PDF (1/19 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 4 A low loss

STGD4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 6 µs of short-circuit withstand time
 VCE(sat) = 1.6 V (typ.) @ IC = 4 A
 Tight parameter distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGD4M65DF2
Table 1: Device summary
Marking
Package
G4M65DF2
DPAK
Packing
Tape and reel
November 2016
DocID028676 Rev 4
This is information on a product in full production.
1/19
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