STGD3NB60SD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 3A - 600V DPAK Power MESH IGBT

®
STGD3NB60SD
N-CHANNEL 3A - 600V DPAK
Power MESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGD3NB60SD 600 V < 1.5 V
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (Vcesat)
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s INTEGRATED FREEWHEELING DIODE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s GAS DISCHARGE LAMP
s STATIC RELAYS
s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES Collector-Emitter Voltage (V_GS = 0)
V_GE Gate-Emitter Voltage
I_C
Collector Current (continuous) at T_c = 25 ^oC
I_C
Collector Current (continuous) at T_c = 100 ^oC
ICM(•)
P_tot
Collector Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 2000
Value
600
± 20
6
3
25
48
0.32
-65 to 175
175
Unit
V
V
A
A
A
W
W/^oC
o_C
o_C
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