STGD3NB60S Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 3A - 600V DPAK Power MESH IGBT

®
STGD3NB60S
N-CHANNEL 3A - 600V DPAK
Power MESH™ IGBT
TYPE
V _CES
V_{CE(s a t )}
I_C
STGD3NB60S
600 V < 1.5 V
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (Vcesat)
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s LIGHT DIMMER
s STATIC RELAYS
s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_ECR
V_GE
I_C
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at T_c = 25 ^oC
Collector Current (continuous) at Tc = 100 ^oC
I_CM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
600
20
± 20
6
3
24
40
0. 32
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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