STGD3NB60H Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT

®
STGD3NB60H
N-CHANNEL 3A - 600V TO-252
PowerMESH™ IGBT
TYPE
V _CES
V_{CE(s a t )}
I_C
STGD3NB60H
600 V < 2.8 V
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_ECR
V_GE
I_C
IC
Emitter-Collector Voltage
G ate-Emitter Voltage
Collector Current (continuous) at T_c = 25 ^oC
Collector Current (continuous) at Tc = 100 ^oC
I_CM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
600
20
± 20
6
3
24
35
0. 28
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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