STGD19N40LZ Datasheet, PDF (1/17 Pages) STMicroelectronics – Low saturation voltage

STGD19N40LZ
Automotive-grade 390 V internally clamped IGBT
E_SCIS 180 mJ
Datasheet - production data
TAB
3
1
DPAK
Features
• AEC-Q101 qualified
• 180 mJ of avalanche energy @ T_C = 150 °C,
L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
• Pencil coil electronic ignition driver
G (1)
RG
RGE
Description
This application-specific IGBT utilizes the most
advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gate-
emitter provide overvoltage protection
capabilities. The device also exhibits low on-state
voltage drop and low threshold drive for use in
automotive ignition systems.
E (3)
SC30180
Order code
STGD19N40LZ
Table 1. Device summary
Marking
Packages
GD19N40LZ
DPAK
Packing
Tape and reel
October 2016
This is information on a product in full production.
DocID024506 Rev 6
www.st.com
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