STGD10HF60KD Datasheet, PDF (1/21 Pages) STMicroelectronics – Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode

STGD10HF60KD
Automotive-grade 10 A, 600 V, short-circuit rugged IGBT
with Ultrafast diode
Datasheet - production data
TAB
3
1
DPAK
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Low on-voltage drop (V_CE(sat))
• Low C_res / C_ies ratio (no cross conduction
susceptibility)
• Switching losses include diode recovery
energy
• Short-circuit rated
• Very soft Ultrafast recovery anti-parallel diode
Figure 1. Internal schematic diagram
Applications
• High frequency inverters
• SMPS and PFC in both hard switch and
resonant topologies
• Motor drives
• Injection systems
Description
This device utilizes the advanced PowerMESH™
process for the IGBT and the Turbo 2 Ultrafast
high voltage technology for the diode. The
combination results in a very good trade-off
between conduction losses and switching
behavior rendering the product ideal for diverse
high voltage applications operating at high
frequencies.
Order code
STGD10HF60KD
Table 1. Device summary
Marking
Package
GD10HF60KD
DPAK
Packaging
Tape and reel
September 2015
This is information on a product in full production.
DocID022874 Rev 3
1/21
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