STGB7NB40LZ Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT

STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGB7NB40LZ CLAMPED < 1.50 V 14 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
3
1
D²PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH^™ IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Reverse Battery Protection
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuous) at 100°C
R_G
Minimum External Gate Resistor
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_CL
Single Pulse Collector to Emitter Avalanche Energy
I_C= 13 A ; T_j= 150°C (see fig.1-2)
E_ECAV
Reverse Avalanche Energy
I_C = 7 A ;f= 100 Hz ; T_c = 25°C
T_stg
Storage Temperature
T_j
Operating Junction Temperature
March 2003
Value
CLAMPED
20
CLAMPED
14
500
100
0.66
130
10
–55 to 175
Unit
V
V
V
A
Ω
W
W/°C
mJ
mJ
°C
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