STGB5H60DF Datasheet, PDF (1/30 Pages) STMicroelectronics – Tight parameters distribution

STGB5H60DF, STGD5H60DF,
STGF5H60DF, STGP5H60DF
Trench gate field-stop IGBT, H series
600 V, 5 A high speed
Datasheet - production data
7$%

'3$.
7$%


'3$.
7$%
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode



72)3
 ^
72
Applications
• Motor control
• UPS, PFC
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the H series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of high switching
frequency converters. Moreover, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
E (3)
Order codes
STGB5H60DF
STGD5H60DF
STGF5H60DF
STGP5H60DF
Table 1. Device summary
Marking
Packages
GB5H60DF
GD5H60DF
GF5H60DF
GP5H60DF
D²PAK
DPAK
TO-220FP
TO-220
Packing
Tape and reel
Tape and reel
Tube
Tube
May 2015
This is information on a product in full production.
DocID027233 Rev 3
1/30
www.st.com