STGB40V60F Datasheet, PDF (1/24 Pages) STMicroelectronics – Low thermal resistance

STGB40V60F, STGFW40V60F,
STGP40V60F, STGW40V60F
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
1
3
2
1
TO-3PF
Features
• Maximum junction temperature: T_J = 175 °C
• Tail-less switching off
• V_CE(sat) = 1.8 V (typ.) @ I_C = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
C (2, TAB)
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
G (1)
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
E (3)
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGB40V60F
STGFW40V60F
STGP40V60F
STGW40V60F
Table 1. Device summary
Marking
Package
GB40V60F
D²PAK
GFW40V60F
TO-3PF
GP40V60F
TO-220
GW40V60F
TO-247
Packaging
Tape and reel
Tube
Tube
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April 2014
This is information on a product in full production.
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