STGB40H65FB Datasheet, PDF (1/17 Pages) STMicroelectronics – Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

STGB40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
C(2, TAB)
G(1)
E(3)
Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
 Tight parameter distribution
 Safe paralleling
 Low thermal resistance
Applications
 Photovoltaic inverters
 High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGB40H65FB
G1C2TE3
Table 1: Device summary
Marking
Package
GB40H65FB
D²PAK
Packing
Tape and reel
June 2016
DocID029491 Rev 1
This is information on a product in full production.
1/17
www.st.com