STGB3NB60SD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT

STGB3NB60SD
N-CHANNEL 3A - 600V D²PAK
Power MESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_c
STGB3NB60SD
600 V
<1.5 V
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (V_cesat)
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s INTEGRATED FREEWHEELING DIODE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
an advanced family of IGBTs, the PowerMESH™ IGBTs,
with outstanding perfomances. The suffix “S” identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).
3
1
D²PAK
TO-263
(suffix“T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s GAS DISCHARGE LAMP
s STATIC RELAYS
s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuos) at T_c=25°C
I_C
I_CM(•)
Collector Current (continuos)at T_c=100°C
Collector Current (pulsed)
P_tot
Total Dissipation at T_c = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area.
Value
600
± 20
6
3
25
70
0.46
–60 to 175
175
Unit
V
V
A
A
A
W
W/°C
°C
°C
November 2000
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