STGB3NB60HD Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT

®
STGB3NB60HD
N-CHANNEL 3A - 600V TO-263
PowerMESH™ IGBT
T YPE
V _CES
V_CE(sat)
I_C
STGB3NB60HD 600 V < 2.8 V
3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_GE G ate-Emitter Voltage
I_C
Collector Current (continuous) at T_c = 25 ^oC
I_C
Collector Current (continuous) at T_c = 100 ^oC
ICM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
T_{s tg} Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by max. junction temperature
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
600
± 20
6
3
24
70
0. 56
-65 to 150
150
Un it
V
V
A
A
A
W
W /^o C
o_C
o_C
June 1999
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