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STGB30V60F Datasheet, PDF (1/19 Pages) STMicroelectronics – Low thermal resistance | |||
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STGB30V60F,
STGP30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
C (2, TAB)
Features
⢠Maximum junction temperature: TJ = 175 °C
⢠Tail-less switching off
⢠VCE(sat) = 1.85 V (typ.) @ IC = 30 A
⢠Tight parameters distribution
⢠Safe paralleling
⢠Low thermal resistance
Applications
⢠Photovoltaic inverters
⢠Uninterruptible power supply
⢠Welding
⢠Power factor correction
⢠Very high frequency converters
G (1)
E (3)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order codes
STGB30V60F
STGP30V60F
Table 1. Device summary
Marking
Package
GB30V60F
GP30V60F
D2PAK
TO-220
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
DocID025049 Rev 4
1/19
www.st.com
19
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