STGB30H60DLFB Datasheet, PDF (1/20 Pages) STMicroelectronics – High speed switching series

STGB30H60DLFB,
STGW30H60DLFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet - production data
TAB
3
1
D²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
C (2, TAB)
Features
• Designed for soft commutation only
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
• Low V_F soft recovery co-packaged diode
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Microwave oven
• Resonant converters
G (1)
E (3)
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new "HB"
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGB30H60DLFB
STGW30H60DLFB
Table 1. Device summary
Marking
Package
GB30H60DLFB
D²PAK
GW30H60DLFB
TO-247
Packaging
Tape and reel
Tube
July 2014
This is information on a product in full production.
DocID026409 Rev 2
1/20
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