STGB30H60DFB Datasheet, PDF (1/21 Pages) STMicroelectronics – Low thermal resistance

STGB30H60DFB,
STGP30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet - production data
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Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Figure 1. Internal schematic diagram
C (2, TAB)
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
G (1)
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
E (3)
tight parameter distribution result in safer
paralleling operation.
Order code
STGB30H60DFB
STGP30H60DFB
Table 1. Device summary
Marking
Package
GB30H60DFB
D2PAK
GP30H60DFB
TO-220
Packaging
Tape and reel
Tube
October 2015
This is information on a product in full production.
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