STGB30H60DF Datasheet, PDF (1/24 Pages) STMicroelectronics – Low thermal resistance

TAB
3
1
D²PAK
TAB
STGB30H60DF, STGF30H60DF,
STGP30H60DF, STGW30H60DF
600 V, 30 A high speed
trench gate field-stop IGBT
Datasheet - production data
3
2
1
TO-220FP
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short circuit rated
• Ultrafast soft recovery antiparallel diode
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Applications
• Inverter
• UPS
• PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGB30H60DF
STGF30H60DF
STGP30H60DF
STGW30H60DF
Table 1. Device summary
Marking
Package
GB30H60DF
D²PAK
GF30H60DF
TO-220FP
GP30H60DF
TO-220
GW30H60DF
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
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