STGB20V60F Datasheet, PDF (1/18 Pages) STMicroelectronics – Tight parameters distribution

TAB
3
1
D²PAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
STGB20V60F,
STGP20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
Features
• Maximum junction temperature: T_J = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V_CE(sat) = 1.8 V (typ.)
@ I_C = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGB20V60F
STGP20V60F
Table 1. Device summary
Marking
Package
GB20V60F
2
D PAK
GP20V60F
TO-220
July 2013
This is information on a product in full production.
DocID024890 Rev 1
Packaging
Tape and reel
Tube
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www.st.com
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