STGB20V60DF Datasheet, PDF (1/23 Pages) STMicroelectronics – Low thermal resistance

STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T_J = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V_CE(sat) = 1.8 V (typ.)
@ I_C = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23