STGB20NB37LZ Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

®
STGB20NB37LZ
N-CHANNEL CLAMPED 20A D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
V _CES
V_{CE(s at)}
I_C
STGB20NB37LZ CLAMPED < 2.0 V 20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
PRELIMINARY DATA
3
1
D²PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collect or-Emitter Voltage (V_GS = 0)
V_ECR
V_GE
I_C
I_C
I_CM(•)
E _AS
P_tot
Reverse Battery Protection
Gate-Emitter Voltage
Collect or Current (continuous) at T_c = 25 ^oC
Collect or Current (continuous) at T_c = 100 ^oC
Collector Current (pulsed)
Single Pulse Energy Tc = 25 ^oC
Total Dissipation at T_c = 25 ^oC
Derating Factor
E_SD ESD (Human Body Model)
Tstg Storage Temperature
T_j Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
February 2000
Value
CLA M PE D
20
CLA M PE D
40
30
80
700
150
1
4
-65 to 175
175
Un it
V
V
V
A
A
A
mJ
W
W /^o C
KV
o_C
o_C
1/6