STGB20H60DF Datasheet, PDF (1/22 Pages) STMicroelectronics – 600 V, 20 A high speed trench gate field-stop IGBT

STGB20H60DF,
STGF20H60DF, STGP20H60DF
600 V, 20 A high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
3
2
1
TO-220
TAB
3
2
1
TO-220FP
3
1
D²PAK
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Applications
• Motor control
• UPS, PFC
Figure 1. Internal schematic diagram
Description
G (1)
C (2, TAB)
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGB20H60DF
STGF20H60DF
STGP20H60DF
Table 1. Device summary
Marking
Packages
GB20H60DF
GF20H60DF
GP20H60DF
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
June 2013
This is information on a product in full production.
DocID023740 Rev 4
1/22
www.st.com
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