STGB18N40LZ_09 Datasheet, PDF (1/19 Pages) STMicroelectronics – EAS 180 mJ - 390 V - internally clamped IGBT

STGB18N40LZ
STGD18N40LZ, STGP18N40LZ
EAS 180 mJ - 390 V - internally clamped IGBT
Features
■ AEC Q101 compliant
■ 180 mJ of avalanche energy @ T_C = 150 °C,
L = 3 mH
■ ESD gate-emitter protection
■ Gate-collector high voltage clamping
■ Logic level gate drive
■ Low saturation voltage
■ High pulsed current capability
■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most
advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gate-
emitter provide overvoltage protection
capabilities. The device also exhibits low on-state
voltage drop and low threshold drive for use in
automotive ignition system.
3
2
1
IPAK
3
1
DPAK
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
C (2 or TAB)
G (1)
RG
RGE
Table 1. Device summary
Order codes
Marking
STGB18N40LZ-1
GB18N40LZ
STGB18N40LZT4
GB18N40LZ
STGD18N40LZ-1
GD18N40LZ
STGD18N40LZT4
STGP18N40LZ
GD18N40LZ
GP18N40LZ
Package
I²PAK
D²PAK
IPAK
DPAK
TO-220
E (3)
SC30180
Packaging
Tube
Tape and reel
Tube
Tape and reel
Tube
May 2009
Doc ID 14322 Rev 5
1/19
www.st.com
19