STGB18N40LZ Datasheet, PDF (1/18 Pages) STMicroelectronics – EAS 180 mJ - 400 V - internally clamped IGBT

STGB18N40LZ
STGD18N40LZ
E_AS 180 mJ - 400 V - internally clamped IGBT
Features
■ AEC Q101 compliant
■ 180 mJ of avalanche energy @ T_C = 150 °C,
L = 3 mH
■ ESD gate-emitter protection
■ Gate-collector high voltage clamping
■ Logic level gate drive
■ Low saturation voltage
■ High pulsed current capability
■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
2
1
IPAK
3
1
DPAK
123
I²PAK
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGD18N40LZT4
GD18N40LZ
STGD18N40LZ-1
GD18N40LZ
STGB18N40LZT4
GB18N40LZ
STGB18N40LZ-1
GB18N40LZ
Package
DPAK
IPAK
D²PAK
I²PAK
March 2008
Rev 2
Packaging
Tape and reel
Tube
Tape and reel
Tube
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