STGB10NB37LZ_01 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT

STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMesh™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGB10NB37LZ CLAMPED < 1.8 V
20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH^™ IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Reverse Battery Protection
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuos) at T_C = 100°C
I_CM
Collector Current (pulse width < 100µs)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_SD
ESD (Human Body Model)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
June 2001
Value
CLAMPED
18
CLAMPED
20
60
125
0.83
4
–65 to 175
175
Unit
V
V
V
A
A
W
W/°C
KV
°C
°C
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