STGB10NB37LZ Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
V _CES
V_{CE(s at)}
I_C
STGB10NB37LZ CLAMPED < 1.8 V 10 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
3
1
D²PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collector-Emitter Volt age (V_GS = 0)
V_ECR
V_GE
I_C
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at T_c = 25 ^oC
Collector Current (continuous) at Tc = 100 ^oC
I_CM(•)
P_tot
Collector Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
ESD ESD (Human Body Model)
T_{s tg} Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
CLA M PE D
18
CLA M PE D
20
20
60
125
0. 83
4
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /^o C
KV
o_C
o_C
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