STGB10H60DF Datasheet, PDF (1/24 Pages) STMicroelectronics – Safe paralleling

STGB10H60DF,
STGF10H60DF, STGP10H60DF
Trench gate field-stop IGBT, H series
600 V, 10 A high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
3
2
1
TO-220FP
3
2
1
TO-220
Applications
• Motor control
• UPS, PFC
Figure 1. Internal schematic diagram
Description
G (1)
C (2, TAB)
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGB10H60DF
STGF10H60DF
STGP10H60DF
Table 1. Device summary
Marking
Packages
GB10H60DF
GF10H60DF
GP10H60DF
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
October 2013
This is information on a product in full production.
DocID025111 Rev 2
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