STG719_07 Datasheet, PDF (1/10 Pages) STMicroelectronics – LOW VOLTAGE 4Ω SPDT SWITCH

STG719
LOW VOLTAGE 4Ω SPDT SWITCH
s HIGH SPEED:
t_PD = 0.3ns (TYP.) at V_CC = 5V
t_PD = 0.4ns (TYP.) at V_CC = 3.3V
s LOW POWER DISSIPATION:
I_CC = 1µA(MAX.) at T_A=25°C
s LOW "ON" RESISTANCE:
R_ON = 4Ω (MAX. T_A=25°C) AT V_CC = 5V
R_ON = 6Ω (TYP.) AT V_CC = 3V
s WIDE OPERATING VOLTAGE RANGE:
V_CC (OPR) = 1.8V TO 5.5V SINGLE SUPPLY
DESCRIPTION
The STG719 is an high-speed S.P.D.T. (Single
Pole Double Throw) SWITCH fabricated in silicon
gate C²MOS technology. It designed to operate
from 1.8V to 5.5V, making this device ideal for
portable applications, audio signal routing, video
switching, mobile and communication systems.
It offers 4Ω ON-Resistance Max at 5V 25°C and
very low ON-Resistance Flatness. Additional key
features are fast switching speed (t_ON=7ns,
SOT23-6L
Table 1: Order Codes
PACKAGE
SOT23-6L
T&R
STG719STR
t_OFF=4.5ns), Break Before Make Delay Time and
Low Power Consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
It’s available in the commercial and extended
temperature range.
Figure 1: Pin Connection And IEC Logic Symbols
November 2004
Rev. 8
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