STG719 Datasheet, PDF (1/7 Pages) STMicroelectronics – LOW VOLTAGE 4ohm SPDT SWITCH

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STG719
LOW VOLTAGE 4Ω SPDT SWITCH
s HIGH SPEED:
t_PD = 0.3 ns (TYP.) at V_CC = 5V
tPD = 0.4 ns (TYP.) at VCC = 3.0V
s LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 85 ^oC
s LOW ”ON” RESISTANCE:
R_ON = 4Ω (MAX. T_a=25^oC) AT V_CC = 5V
RON = 6Ω (TYP.) AT VCC = 3.0V
s WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 1.8V to 5.5V SINGLE SUPPLY
DESCRIPTION
The STG719 is an high speed SPDT CMOS
SWITCH frabricated in silicon gate C²MOS
technology. It is designed to operate from 1.8V to
5.5V, making this device ideal for portable
applications. It offers 4Ω ON-Resistance Max at
SOT23-6L
PACKAGE
SOT23-6L
ORDER CODES
T UB E
T&R
STG719FTR
5V 25^oC. Additional key features are fast
switching speed (tON=7ns, tOFF=4.5ns) and Low
Power Consumption (<0.01µW Typ.). ESD
immunity is higher than 1000V per Method
3015.7 of MIL-STD-883B. It’s avalable in the
commercial temperature range.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
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