STG5123 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low voltage 1 Ω single SPDT switch with break-before-make feature

STG5123
Low voltage 1 Ω single SPDT switch
with break-before-make feature
Features
■ High speed:
– t_PD = 130 ps (typ.) at V_CC = 3.0 V
– t_PD = 140 ps (typ.) at V_CC = 2.3 V
■ Ultra low power dissipation:
– I_CC = 0.2 µA (max.) at T_A = 85 °C
■ Low ON resistance:
– R_ON = 1.0 Ω (Typ.)
at V_CC = 4.5 V
– R_ON = 1.2 Ω (Typ.)
at V_CC = 3.0 V
– R_ON = 2.0 Ω (Typ.)
at V_CC = 1.8 V
■ Wide operating voltage range:
– V_CC (opr) = 1.65 to 4.5 V single supply
■ 5 V tolerant and 1.8 V compatible threshold on
digital control input at V_CC = 1.65 to 4.5 V
■ Latch-up performance exceeds 200 mA per
JESD 78, Class II
■ ESD performance tested per JESD22
– 2000 V human-body model
(A114-B, Class II)
– 200 V machine model (A115-A)
– 1000 V charged-device model (C101)
DFN6L
Description
The STG5123 is a high-speed CMOS low voltage
single analog SPDT (single-pole dual-throw)
switch or 2:1 multiplexer/demultiplexer switch
fabricated using silicon gate C²MOS technology.
Designed to operate from 1.65 to 4.5 V, this
device is ideal for portable applications.
The device offers very low ON resistance (1 Ω) at
V_CC = 4.5 V. The switch S1 is ON (connected to
common ports Dn) when the SEL input is held
high and OFF (state of high impedance state
exists between the two ports) when SEL is held
low. The switch S2 is ON (connected to common
port D) when the SEL input is held low and OFF
(state of high impedance state exists between the
two ports) when SEL is held high.
Additional key features are fast switching speed,
break-before-make delay time and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits against static discharge,
giving them ESD and transient excess voltage
immunity.
Table 1. Device summary
Order code
STG5123DTR
October 2007
Package
DFN6L (1.2 x 1 mm)
Rev 1
Packaging
Tape and reel
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