STG3P3M25N60 Datasheet, PDF (1/12 Pages) STMicroelectronics – 3 Phase inverter IGBT - SEMITOP®3 module

STG3P3M25N60
3 Phase inverter
IGBT - SEMITOP^®3 module
PRELIMINARY DATA
General features
Type
STG3P3M25N60
V_CES
V_CE(sat)(Max)
@ I_C=7A, I_C@80°C
Ts=25°C
600V
< 2.5V
25A
■ N-channel very fast PowerMESH™ IGBT
■ Lower on-voltage drop (V_cesat)
■ Lower C_RES / C_IES ratio (no cross-conduction
susceptbility)
■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation up to 70 KHz
■ New generation products with tighter
parameter distribution
■ One screw mounting
■ Compact design
■ Semitop^®3 is a trademark of Semikron
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performances.
Applications
■ High frequency inverters
■ Motor drivers
SEMITOP®3
Internal schematic diagram
Order codes
Sales Type
STG3P3M25N60
Marking
G3P3M25N60
Package
SEMITOP®3
Packaging
SEMIBOX
May 2006
Rev1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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