STG3856QTR Datasheet, PDF (1/15 Pages) STMicroelectronics – Low voltage 1.0 max dual SP3T switch with break-before-make feature

STG3856
Low voltage 1.0 Ω max dual SP3T switch
with break-before-make feature
Features
■ High speed:
– t_PD = 0.3 ns (typ.) at V_CC = 3.0 V
– t_PD = 0.4 ns (typ.) at V_CC = 2.3 V
■ Ultra low power dissipation:
– I_CC = 0.2 µA (max.) at T_A = 85°C
■ Low ON resistance V_IN = 0 V:
– R_ON = 1.0 Ω (max. T_A = 25°C) at
V_CC = 4.3 V
– R_ON = 1.5 Ω (max. T_A = 25°C) at
V_CC = 3.0 V
– R_ON = 1.8 Ω (max. T_A = 25°C) at
V_CC = 2.3 V
■ Wide operating voltage range:
– V_CC (opr) = 1.65 V to 4.3 V single supply
■ 4.3 V tolerant and 1.8 V compatible threshold
on digital control input at V_CC = 2.3 to 4.3 V
■ Latch-up performance exceeds 300 mA
(JESD 17)
■ ESD performance (analog channel vs. GND):
HBM > 2 kV (MIL STD 883 method 3015)
QFN12L
Description
The STG3856 is a high-speed CMOS low voltage
dual analog SP3T (single pole triple throw) switch
or dual 3 : 1 multiplexer /demultiplexer switch
fabricated in silicon gate C²MOS technology. It is
designed to operate from 1.65 V to 4.3 V, making
this device ideal for portable applications.
The device offers very low ON resistance
(< 1.0 Ω) at V_CC = 4.3 V. The disabling and
enabling of switches are done by setting the 1IN
and 2IN control pins. Additional key features are
fast switching speed, and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits against static discharge,
giving them ESD immunity and transient excess
voltage.
Table 1. Device summary
Order code
Temperature range
Package
STG3856QTR
-40°C to +85°C QFN12L (2.2 x 1.4 mm)
March 2010
Doc ID 11932 Rev 3
Packaging
Tape and reel
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