STG3159 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low voltage 1Ω max single SPDT switch with break-before-make feature

STG3159
Low voltage 1Ω max single SPDT switch
with break-before-make feature
Features
■ High speed:
– t_PD = 1.5ns (Typ.) at V_CC = 3.0V
– t_PD = 1.5ns (Typ.) at V_CC = 2.3V
■ Ultra low power dissipation:
– I_CC = 0.2µA (Max.) at T_A = 85°C
■ Low "ON" resistance:
– R_ON = 1.0Ω (T_A = 25ºC) at V_CC = 4.3V
– R_ON = 1.1Ω (T_A = 25ºC) at V_CC = 3.0V
– R_ON = 1.7Ω (T_A = 25ºC) at V_CC = 1.8V
■ Wide operating voltage range:
– V_CC (OPR) = 1.65V to 4.5V single supply
■ 4.5V Tolerant and 1.8V compatible threshold
on digital control input at V_CC = 2.3V to 3.0V
■ Latch-up performance exceeds 100mA per
JESD 78, Class II
■ ESD Performance tested per JESD22
– 2000V Human-body model
(A114-B, Class II)
– 200V Machine model (A115-A)
– 1000V Charged-device model (C101)
DFN6L
Description
The STG3159 is a high-speed CMOS low voltage
single analog S.P.D.T. (Single Pole Dual Throw)
switch or 2:1 Multiplexer /Demultiplexer switch
fabricated in silicon gate C²MOS technology. It is
designed to operate from 1.65V to 4.3V, making
this device ideal for portable applications.
The device offers very low ON-Resistance (1Ω) at
V_CC = 4.3V. The SEL inputs are provided to
control the switch. The switch S1 is ON (they are
connected to common Ports Dn) when the SEL
input is held high and OFF (high impedance state
exists between the two ports) when SEL is held
low; the switch S2 is ON (it is connected to
common Port D) when the SEL input is held low
and OFF (high impedance state exists between
the two ports) when SEL is held high.
Additional key features are fast switching speed,
break-before-make delay time and Ultra Low
Power Consumption. All inputs and outputs are
equipped with protection circuits against static
discharge, giving them ESD immunity and
transient excess voltage.
Order codes
Part number
STG3159DTR
December 2006
Package
DFN6L (1.2mm x 1mm)
Rev 1
Packaging
Tape and Reel
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