STG3155 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low voltage 0.5Ω Max single SPDT switch with break-before-make feature

STG3155
Low voltage 0.5Ω Max single SPDT switch
with break-before-make feature
Features
■ High speed:
– t_PD = 1.5ns (Typ.) at V_CC = 3.0V
– t_PD = 1.5ns (Typ.) at V_CC = 2.3V
■ Ultra low power dissipation:
– I_CC = 0.2µA (Max.) at T_A = 85°C
■ Low "ON" resistance:
– R_ON = 0.5Ω (T_A = 25ºC) at V_CC = 4.3V
– R_ON = 0.6Ω (T_A = 25ºC) at V_CC = 3.0V
– R_ON = 1.0Ω (T_A = 25ºC) at V_CC = 1.8V
■ Wide operating voltage range:
– V_CC (OPR) = 1.65V to 4.3V single supply
■ 4.3V Tolerant and 1.8V compatible threshold
on digital control input at V_CC = 2.3V to 3.0V
■ Latch-up performance exceeds 300mA (JESD
17)
■ ESD Performance (Analog Chan. Vs. GND):
HMB >2kV (MIL STD 883 method 3015)
DFN6L
Description
The STG3155 is a high-speed CMOS low voltage
single analog S.P.D.T. (Single Pole Dual Throw)
switch or 2:1 Multiplexer /Demultiplexer switch
fabricated in silicon gate C²MOS technology. It is
designed to operate from 1.65V to 4.3V, making
this device ideal for portable applications.
The device offers very low ON-Resistance
(<0.5Ω) at V_CC = 4.3V. The SEL inputs are
provided to control the switch. The switch S1 is
ON (they are connected to common Ports Dn)
when the SEL input is held high and OFF (high
impedance state exists between the two ports)
when SEL is held low; the switch S2 is ON (it is
connected to common Port D) when the SEL
input is held low and OFF (high impedance state
exists between the two ports) when SEL is held
high.
Additional key features are fast switching speed,
break-before-make delay time and Ultra Low
Power Consumption. All inputs and outputs are
equipped with protection circuits against static
discharge, giving them ESD immunity and
transient excess voltage.
Table 1.
Device summary
Part number
STG3155DTR
Package
DFN6L (1.45mm x 1mm)
Packaging
Tape and Reel
May 2007
Rev 2
1/18
www.st.com
18