STFW6N120K3 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages

STFW6N120K3, STP6N120K3,
STW6N120K3
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
V_DSS
R_DS(on)
max
I_D
P_tot
STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W
STP6N120K3 1200 V < 2.4 Ω 6 A 150 W
STW6N120K3 1200 V < 2.4 Ω 6 A 150 W
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
2
1
TO-3PF
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STFW6N120K3
STP6N120K3
STW6N120K3
Marking
6N120K3
Package
TO-3PF
TO-220
TO-247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 15572 Rev 3
1/17
www.st.com
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